APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 1-6 application welding converters switched mode power supplies uninterruptible power supplies motor control features non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated kelvin emitter for easy drive very low stray inductance - symmetrical design - lead frames for power connections internal thermistor for temperature monitoring high level of integration benefits outstanding performance at high frequency operation stable temperature behavior very rugged direct mounting to heatsink (isolated package) low junction to case thermal resistance solderable terminals both for power and signal for easy pcb mounting easy paralleling due to positive tc of vcesat low profile absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be follow ed. vbus q1 g1 e1 out ntc2 0/vbu s g2 e2 ntc1 q2 out out ntc2 vbus e1 g2 e2 ntc1 0/vbus g2 e2 g1 symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 150 i c continuous collector current t c = 80c 100 i cm pulsed collector current t c = 25c 300 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 568 w rbsoa reverse bias safe operating area t j = 150c 300a @ 1200v v ces = 1200v i c = 100a @ tc = 80c phase leg npt igbt power module
APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 750 a 1200 v t j = 25c 750 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 3750 a t j = 25c 3.2 3.7 v ce(on) collector emitter on voltage v ge =15v i c = 100a t j = 125c 4.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20 v, v ce = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 6900 c oes output capacitance 660 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 440 pf q g total gate charge 660 q ge gate ? emitter charge 70 q gc gate ? collector charge v gs = 15v v bus = 600v i c = 100a 400 nc t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 320 t f fall time 30 ns e on turn-on switching energy 10.8 e off turn-off switching energy inductive switching (25c) v ge = 15v v bus = 600v i c = 100a r g = 2.5 4.6 mj t d(on) turn-on delay time 35 t r rise time 65 t d(off) turn-off delay time 360 t f fall time 40 ns e on turn-on switching energy 13.9 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 600v i c = 100a r g = 2.5 6.1 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle tc = 70c 120 a i f = 120a 2.0 2.5 i f = 240a 2.3 v f diode forward voltage i f = 120a t j = 125c 1.8 v t j = 25c 370 t rr reverse recovery time i f = 120a v r = 800v di/dt =800a/s t j = 125c 500 ns t j = 25c 2.64 q rr reverse recovery charge i f = 120a v r = 800v di/dt =800a/s t j = 125c 13.8 c e on includes diode reverse recovery in accordance with jedec standard jesd24-1
APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.22 r thjc junction to case diode 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 4.7 n.m wt package weight 160 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k b 25/85 t 25 = 298.16 k 4080 k
t t b r r t 1 1 exp 25 85 / 25 25 package outline t: thermistor temperature r t : thermistor value at t
APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 80 160 240 320 400 02468 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle output characteristics (v ge =10v) t j =25c t j =125c 0 20 40 60 80 100 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 100 200 300 400 500 600 0 4 8 12 16 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle gate charge v ce =240v v ce =600v v ce =960v 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 700 gate charge (nc) v ge , gate to emitter voltage (v) i c = 100a t j = 25c ic=200a ic=100a ic=50a 0 1 2 3 4 5 6 7 8 9 9 10111213141516 v ge , gate to emitter voltage (v) on state voltage vs gate to emitter volt. v ce , collector to emitter voltage (v) t j = 25c 250s pulse test < 0.5% duty cycle ic=200a ic=100a ic=50a 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature
APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 5-6 v ge = 15v 25 30 35 40 45 0 50 100 150 200 250 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current v ce = 600v r g = 2.5 ? v ge =15v, t j =25c v ge =15v, t j =125c 200 250 300 350 400 0 50 100 150 200 250 i ce , collector to emitter current (a) turn-off delay time vs collector current td(off), turn-off delay time (ns ) v ce = 600v r g = 2.5 ? v ge =15v 20 60 100 140 180 0 50 100 150 200 250 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 600v r g = 2.5 ? t j = 25c t j = 125c 20 30 40 50 0 50 100 150 200 250 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 600v, v ge = 15v, r g = 2.5 ? t j =25c, v ge =15v t j =125c, v ge =15v 0 8 16 24 32 40 48 56 0 50 100 150 200 250 i ce , collector to emitter current (a) turn-on energy loss vs collector current eon, turn-on energy loss (mj ) v ce = 600v r g = 2.5 ? t j = 25c t j = 125c 0 4 8 12 16 0 50 100 150 200 250 i ce , collector to emitter current (a) eoff, turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 600v v ge = 15v r g = 2.5 ? eon, 100a eoff, 100a eon, 50a eoff, 50a 0 4 8 12 16 20 24 28 32 36 0 5 10 15 20 25 gate resistance (ohms) switching energy losses (mj) switching energy losses vs gate resistance v ce = 600v v ge = 15v t j = 125c eon, 100a eoff, 100a eon, 50a eoff, 50a 0 4 8 12 16 0 255075100125 t j , junction temperature (c) switching energy losses (mj) switching energy losses vs junction temp. v ce = 600v v ge = 15v r g = 2.5 ?
APTGF100A120T APTGF100A120T ? rev 1 march, 2004 apt website ? htt p :/ / www.advanced p ower.com 6-6 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0 50 100 150 200 250 300 350 0 400 800 1200 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v) 0.9 0.35 0.25 0.15 0.05 0.025 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 0 10 20 30 40 50 60 70 10 30 50 70 90 110 i c , collector current (a) operating frequency vs collector current fmax, operating frequency (khz) v ce = 600v d = 50% r g = 2.5 ? t j = 125c apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
